Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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[[Image:BHF_RR3.jpg|300x300px|thumb|Wet Silicon Oxide Etch (BHF): positioned in cleanroom 3]] | [[Image:BHF_RR3.jpg|300x300px|thumb|Wet Silicon Oxide Etch (BHF): positioned in cleanroom 3]] | ||
Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more | Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stable etch rate and more gentle to photoresist due to an almost pH neutral solution which makes photoresist a good masking material for the oxide etch. | ||
SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes. If you have wetting problems in BHF try the SIO etch. It is also a good idea to wet the sample in water before etching. | SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes. If you have wetting problems in BHF try the SIO etch. It is also a good idea to wet the sample in water before etching. | ||
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|'''General description''' | |'''General description''' | ||
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Etching of silicon oxide with a | Etching of silicon oxide with a stable etch rate | ||
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Mainly for removing native oxide | Mainly for removing native oxide | ||