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Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

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[[Image:beamer5.jpg|frame|250x250px|right]]
[[Image:beamer5.jpg|frame|250x250px|right]]


BEAMER is endowed with a software that corrects for proximity errors in the e-beam exposure. You can read more about this function in the BEAMER manual in LabManager under Technical Documents [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=292 here] and in the BEAMER presentation here [[media:BEAMERPresentation.pdf‎|BEAMERPresentation.pdf‎]].
BEAMER is endowed with a software that corrects for proximity errors in the e-beam exposure. You can read more about this function in the BEAMER manual [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER|here]] and in the BEAMER presentation here [[media:BEAMERPresentation.pdf‎|BEAMERPresentation.pdf‎]].


The proximity error correction require a forward and a backward range parameter, alfa and beta, and a ratio of backscattered energy to the forward scattered energy, eta. As alfa depends on the electron acceleration voltage, which is constant at 100kV, alfa is in BEAMER fixed to 0.007. Help to find beta and eta can be found [http://nanolithography.gatech.edu/proximity.htm here].
The proximity error correction require a forward and a backward range parameter, alfa and beta, and a ratio of backscattered energy to the forward scattered energy, eta. As alfa depends on the electron acceleration voltage, which is constant at 100kV, alfa is in BEAMER fixed to 0.007. Help to find beta and eta can be found [http://nanolithography.gatech.edu/proximity.htm here].