Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation: Difference between revisions

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-! Exposed patetrn aligned to global marks on a 4" wafer
+! Dose-modulated pattern aligned to global marks on a 4" wafer
 |-
-!colspan="2"| A 3*3 array of chips, each 1 mm*1 mm in size, is written on a 4” wafer, but only within a 3.8" diameter. The top left chip of the array (of patterns) is centered at (X,Y) = (-5000,35000). All chips are of pattern #1 detailed in the ‘mettekjan2012.v30’-file. A current of 0.88 nA is used in the dwell time calculation, and in the writing time estimation. A shot-shape modulation of 48 levels is applied to each chip. Before exposure, the calibration-path ‘DRF5M’ is applied.
+!colspan="2"| A 3*3 array of chips, each 1 mm*1 mm in size, is written on a 4” wafer, but only within a 3.8" diameter. The top left chip of the array (of patterns) is centered at (X,Y) = (-5000,35000). All chips are of pattern #1 detailed in the ‘mettekjan2012.v30’-file. A dose modulation of 48 levels is applied to each chip. Before exposure, the calibration-path ‘HEI’ is applied.
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 JOB/W    'BERIT',4,3.8
-PATH   DRF5M
+PATH   HEI
   ARRAY       (-35000,3,1000)/(35000,3,1000)
    ASSIGN P(1)->((*,*),SHOT1)