Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation: Difference between revisions

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 RESIST 250
 STDCUR  0.22 ;nA
+END
+</pre>
+|-
+|}
+{| class="wikitable collapsible autocollapse"
+! Exposed patetrn aligned to global marks on a 4" wafer
+|-
+!colspan="2"| A 3*3 array of chips, each 1 mm*1 mm in size, is written on a 4” wafer, but only within a 3.8" diameter. The top left chip of the array (of patterns) is centered at (X,Y) = (-5000,35000). All chips are of pattern #1 detailed in the ‘mettekjan2012.v30’-file. A current of 0.88 nA is used in the dwell time calculation, and in the writing time estimation. A shot-shape modulation of 48 levels is applied to each chip. Before exposure, the calibration-path ‘DRF5M’ is applied.
+|-
+|-
+|
+SDF file
+<pre>
+MAGAZIN 'LAYERS'
+#1
+%4A
+JDF     'berit',1
+ACC 100
+CALPRM '0.2na_ap5'
+GLMDET S
+CHIPAL 0
+DEFMODE 2
+OFFSET(0,0)
+END 1
+</pre>
+JDF FILE
+<pre>
+JOB/W    'BERIT',4,3.8
+PATH   DRF5M
+ ARRAY       (-35000,3,1000)/(35000,3,1000)
+  ASSIGN P(1)->((*,*),SHOT1)
+ AEND
+PEND
+LAYER  1
+P(1)  'mettekjan2012.v30'
+SPPRM 4.0,,,,1.0,1
+STDCUR  0.88 ;nA
+SHOT1: MODULAT (( 0, -2.8 ) , ( 1, -2.0 ) , ( 2, -1.2 )
+-     , ( 3, -0.4 ) , ( 4,  0.5 ) , ( 5,  1.3 )
+-     , ( 6,  2.1 ) , ( 7,  3.0 ) , ( 8,  3.9 )
+-     , ( 9,  4.7 ) , ( 10,  5.6 ) , ( 11,  6.5 )
+-     , ( 12,  7.3 ) , ( 13,  8.2 ) , ( 14,  9.1 )
+-     , ( 15, 10.0 ) , ( 16, 11.0 ) , ( 17, 11.9 )
+-     , ( 18, 12.8 ) , ( 19, 13.7 ) , ( 20, 14.7 )
+-     , ( 21, 15.6 ) , ( 22, 16.6 ) , ( 23, 17.6 )
+-     , ( 24, 18.6 ) , ( 25, 19.5 ) , ( 26, 20.5 )
+-     , ( 27, 21.5 ) , ( 28, 22.5 ) , ( 29, 23.6 )
+-     , ( 30, 24.6 ) , ( 31, 25.6 ) , ( 32, 26.7 )
+-     , ( 33, 27.7 ) , ( 34, 28.8 ) , ( 35, 29.8 )
+-     , ( 36, 30.9 ) , ( 37, 32.0 ) , ( 38, 33.1 )
+-     , ( 39, 34.2 ) , ( 40, 35.3 ) , ( 41, 36.5 )
+-     , ( 42, 37.6 ) , ( 43, 38.7 ) , ( 44, 39.9 )
+-     , ( 45, 41.0 ) , ( 46, 42.2 ) , ( 47, 43.4 ))
 END