Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation: Difference between revisions
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When the pattern is accepted by user, the e-beam exposure can start. | When the pattern is accepted by user, the e-beam exposure can start. | ||
=== Examples === | |||
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! 20 coloums of chips on a wafer; the first 10 coloums of the array is exposed with one shot pitch, the rest of the chips with another. | |||
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!colspan="2"| An array of 20 chips is written on one 4" wafer. The first 10 coloums of the array is defined in layer block no. 1 of the jdf, coloumn 11-20 is defined in layer block no. 2 of the jdf. The two layer blocks uses different beam shot pitch and base dose. The two layer blocks must be called in two different sequences in the sdf-file. | |||
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SDF file | |||
<pre> | |||
MAGAZIN 'LAYERS' | |||
#1 | |||
%4A | |||
JDF 'layers',1 | |||
ACC 100 | |||
CALPRM '0.2na_ap5' | |||
DEFMODE 2 | |||
OFFSET(0,0) | |||
#1 | |||
%4A | |||
JDF 'layers',2 | |||
ACC 100 | |||
CALPRM '0.2na_ap5' | |||
DEFMODE 2 | |||
OFFSET(0,0) | |||
END 1 | |||
</pre> | |||
JDF FILE | |||
<pre> | |||
JOB/W 'TWOLAYERS',4 | |||
PATH DRF5M | |||
ARRAY (-10000,20,2000)/( 10000,20,2000) | |||
ASSIGN P(1) -> (1-10,*) | |||
ASSIGN P(2) -> (11-20,*) | |||
AEND | |||
PEND | |||
LAYER 1 | |||
P( 1 ) 'test2.v30' | |||
SPPRM 4.0,,,,1.0,1 | |||
SHOT A,20 | |||
RESIST 220 | |||
STDCUR 0.22 ;nA | |||
LAYER 2 | |||
P( 2 ) 'test2.v30' | |||
SPPRM 4.0,,,,1.0,1 | |||
SHOT A,40 | |||
RESIST 250 | |||
STDCUR 0.22 ;nA | |||
END | |||
</pre> | |||
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