Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation: Difference between revisions
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MAGAZIN 'ALIGN' | MAGAZIN 'ALIGN' | ||
#1 | #1 Cassette from slot no. 1 is used | ||
%4A | %4A Wafer of 4" in position A is exposed | ||
JDF 'align',1 | JDF 'align',1 Layer block no. 1 of the jdf-file 'align.jdf' is exposed | ||
ACC 100 | ACC 100 Acceleration voltage is 100keV | ||
CALPRM '0.2na_ap5' | CALPRM '0.2na_ap5' The condition file 0.2na_ap5 is used | ||
DEFMODE 2 | DEFMODE 2 Both deflectors are used (default) | ||
GLMDET S | GLMDET S Semi-automatic global mark detection is used | ||
CHIPAL 0 | CHIPAL 0 No chip-mark detection is used | ||
HSWITCH OFF,ON Height mesaurements at chip mark positions | HSWITCH OFF,ON Height mesaurements at chip mark positions | ||
RESIST 240 | RESIST 240 A dose of 240 µC/cm2 is used | ||
SHOT A,8 | SHOT A,8 The shot step between individual beam shots is 4 nm | ||
OFFSET(0,0) | OFFSET(0,0) An offset of 0 µm is applied in both X and Y | ||
END 1 | END 1 After exposure, cassette no. 1 is left on stage | ||
______________________________________________________________ | ______________________________________________________________ | ||