Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation: Difference between revisions
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Below, an explanation of the template 'simple.sdf'. Note that semicolon outcomments the text: | Below, an explanation of the template 'simple.sdf'. Note that semicolon outcomments the text: | ||
<pre> | |||
___________________________________________________________________________ | ___________________________________________________________________________ | ||
MAGAZIN 'SIMPLE1' | MAGAZIN 'SIMPLE1' The magazine name is SIMPLE1; max. 20 capital letters | ||
#6 | #6 Cassette from slot no. 6 is used | ||
%4A | %4A Wafer of 4" in position A is exposed | ||
JDF 'simple',1 | JDF 'simple',1 Layer block no. 1 of the jdf-file 'simple.jdf' is exposed | ||
ACC 100 | ACC 100 Acceleration voltage of 100keV is used | ||
CALPRM '0.2na_ap5' | CALPRM '0.2na_ap5' The condition file 0.2na_ap5 is used | ||
DEFMODE 2 | DEFMODE 2 Both deflectors are used (default) | ||
RESIST 240 | RESIST 240 A dose of 240 µC/cm2 is used | ||
SHOT A,8 | SHOT A,8 The shot step between individual beam shots is 4 nm | ||
OFFSET(0,0) | OFFSET(0,0) An offset of 0 µm is applied in both X and Y | ||
END | END After exposure, the stage is left empty, i.e. the cassette is unloaded | ||
___________________________________________________________________________ | ___________________________________________________________________________ | ||
</pre> | |||
Note that the unit in the SHOT command is in 0.5nm, i.e. 'SHOT A,16' gives a shot pitch of 8nm. | Note that the unit in the SHOT command is in 0.5nm, i.e. 'SHOT A,16' gives a shot pitch of 8nm. | ||