Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinan331: Difference between revisions

From LabAdviser
Newer edit →
VisualWikitext
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
Created page with "== The Sinano3.31 recipe == {| border="2" cellpadding="2" cellspacing="1" |+ '''Recipe Sinano3.31''' |- ! rowspan="6" align="center"| Recipe | Gas | BCl<sub>3</sub> 5 sccm, ..."
 
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,416 edits
Line 1: Line 1:
== The Sinano3.31 recipe ==
== The Sinano3.31 recipe ==
 
<!-- revised 1/6-2015 by jmli -->
{| border="2" cellpadding="2" cellspacing="1"  
{| border="2" cellpadding="2" cellspacing="1"  
|+ '''Recipe Sinano3.31'''
|+ '''Recipe Sinano3.31'''

Revision as of 13:14, 1 June 2015

The Sinano3.31 recipe

Recipe Sinano3.31
Recipe Gas BCl3 5 sccm, HBR 15 sccm
Pressure 2 mTorr, Strike 3 secs @ 5 mTorr
Power 900 W CP, 75 W PP
Temperature 50 degs
Hardware 100 mm Spacers
Time 60, 120 and 180 secs
Conditions Run ID 452, 453 and 454
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 190 nm zep
  • The results of the Sinano3.31 recipe
  • The 30 nm trenches etched 60 seconds
    The 30 nm trenches etched 60 seconds
  • The 60 nm trenches etched 60 seconds
    The 60 nm trenches etched 60 seconds
  • The 90 nm trenches etched 60 seconds
    The 90 nm trenches etched 60 seconds
  • The 120 nm trenches etched 60 seconds
    The 120 nm trenches etched 60 seconds
  • The 150 nm trenches etched 60 seconds
    The 150 nm trenches etched 60 seconds
  • The 30 nm trenches etched 120 seconds
    The 30 nm trenches etched 120 seconds
  • The 60 nm trenches etched 120 seconds
    The 60 nm trenches etched 120 seconds
  • The 90 nm trenches etched 120 seconds
    The 90 nm trenches etched 120 seconds
  • The 120 nm trenches etched 120 seconds
    The 120 nm trenches etched 120 seconds
  • The 150 nm trenches etched 120 seconds
    The 150 nm trenches etched 120 seconds
  • The 30 nm trenches etched 180 seconds
    The 30 nm trenches etched 180 seconds
  • The 60 nm trenches etched 180 seconds
    The 60 nm trenches etched 180 seconds
  • The 90 nm trenches etched 180 seconds
    The 90 nm trenches etched 180 seconds
  • The 120 nm trenches etched 180 seconds
    The 120 nm trenches etched 180 seconds
  • The 150 nm trenches etched 180 seconds
    The 150 nm trenches etched 180 seconds


After 60 seconds
Nominal trench line width ' ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 81 107 111 116 122 107 16
Sidewall angle degs 83 83 81 82 77 81 3
CD loss nm/edge -4 -13 -12 -12 -29 -14 9
CD loss foot nm/edge 1 0 1 -1 -2 0 2
Bowing 6 5 10 8 18 9 5
Bottom curvature -6 -5 -2 -3 3 -3 3
Zep etch rate nm/min 81
After 120 seconds
Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 77 101 112 119 119 106 18
Sidewall angle degs 85 84 84 82 82 83 1
CD loss nm/edge -4 -17 -14 -10 -23 -13 7
CD loss foot nm/edge 2 -4 0 2 4 1 3
Bowing 9 11 14 15 9 12 3
Bottom curvature -28 -4 -2 2 3 -6 13
Zep etch rate nm/min 56


after 180 seconds
Nominal trench line width ' 30 60 90 150 Average Std. dev.
Etch rate nm/min 49 97 105 111 91 28
Sidewall angle degs 76 83 82 80 80 3
CD loss nm/edge 18 7 14 3 10 7
CD loss foot nm/edge 23 20 28 30 25 5
Bowing -2 10 -4 -5 0 7
Bottom curvature -28 -9 -2 1 -9 13
Zep etch rate nm/min 53
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon/nano/Sinan331&oldid=19016"