Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano3

The Sinano3.0 recipe

Recipe Sinano3.0

Recipe	Gas	BCl3 5 sccm, HBr 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 50 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	150 secs
Conditions	Run ID	417, 418 and 419
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	110 nm zep etched down to 64 nm
	Wafer	WF_2A#4_feb06_2011

• The results of the Sinano3.0 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:BCl3 5 sccm, HBr 15 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 50 W PP, 20 degs, 180 secs

Nominal trench line width	'	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min		236	307	333	341	339	311	44
Sidewall angle	degs		84	82	83	81	80	82	2
CD loss	nm/edge		28	46	62	88	103	65	30
CD loss foot	nm/edge		28	46	62	88	103	65	30
Bowing			21	32	35	33	36	31	6
Bottom curvature			-30	-27	-18	14	16	-9	22
Zep etch rate								46

The Sinano3.0 recipe

Recipe Sinano3.0

Recipe	Gas	BCl3 5 sccm, HBr 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 50 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	150 secs
Conditions	Run ID	417, 418 and 419
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	110 nm zep etched down to 64 nm
	Wafer	WF_2A#4_feb06_2011

• The results of the Sinano3.0 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:BCl3 5 sccm, HBr 15 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 50 W PP, 20 degs, 180 secs

Nominal trench line width	'	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min		236	307	333	341	339	311	44
Sidewall angle	degs		84	82	83	81	80	82	2
CD loss	nm/edge		28	46	62	88	103	65	30
CD loss foot	nm/edge		28	46	62	88	103	65	30
Bowing			21	32	35	33	36	31	6
Bottom curvature			-30	-27	-18	14	16	-9	22
Zep etch rate								46