Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.0: Difference between revisions

Revision as of 13:11, 1 June 2015

**Process conditions**
Substrate information	Wafer	S002872
	Substrate description	200 nm wide trenches with 400 nm pitch in Barc+stepper resist on quarter 6" wafer CB on oxide carrier
	Date	22/6-2012
	Tool	Pegasus
Process	Recipe	nb-1.0
	Tool conditioning	TDESC clean (?) then 30 second barc etch step before etch
	Process duration	3:45 minutes
	Purpose	test
	Characterisation	SEM Zeiss

**Process conditions**
Substrate information	Wafer	S003051
	Substrate description	200 nm wide trenches with 400 nm pitch in Barc+stepper resist on quarter 6" wafer CB on oxide carrier
	Date	11/9-2012
	Tool	Pegasus
Process	Recipe	nb-1.0
	Tool conditioning	TDESC clean (?) then 30 second barc etch step before etch
	Process duration	8:00 minutes or 60 cycles
	Purpose	Improved matching
	Characterisation	SEM Zeiss

**Process conditions**
Substrate information	Wafer	C01290.03
	Mask	2.2 µm AZ resist
	Date	21/9-2012
	Tool	Pegasus
Process	Run ID	C12090.03
	Tool conditioning	5 minute TDESC clean
	Mask description	Travka50 mask
	Purpose	See how the nb-1.0 behaves on AZ resist
	Characterisation	SEM Leo

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 == Trial runs on HTF stepper wafers 22/6-2012 ==
+<!-- revised 1/6-2015 by jmli -->
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