Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

Revision as of 10:29, 21 February 2008 view source BGE (talk \| contribs) Bureaucrats, danchip, Administrators 2,908 edits →Silicon oxide etch data ← Older edit		Revision as of 10:30, 21 February 2008 view source BGE (talk \| contribs) Bureaucrats, danchip, Administrators 2,908 edits →Wet Silicon Oxide Etch (BHF and SIO Etch (wetting agent)) Newer edit →
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	Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stabil etch rate and has a high selectivty of oxide compared to photoresist which makes photoresist a good masking material for the oxide etch. However etching down to a silicon surface BHF leaves the siliocn surface slightly more rough than a pure HF solution.		Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stabil etch rate and has a high selectivty of oxide compared to photoresist which makes photoresist a good masking material for the oxide etch. However etching down to a silicon surface BHF leaves the siliocn surface slightly more rough than a pure HF solution.

	SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes.		SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes. If you have wetting problems in BHF try the SIO etch.