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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

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It produces a contact angle of 81-82° on an oxidized silicon surface. General information on HMDS priming can be found  [[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_UV_processing#HMDS priming|here]].
It produces a contact angle of 81-82° on an oxidized silicon surface. General information on HMDS priming can be found  [[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_UV_processing#HMDS priming|here]].


''Sequence names, process parameters, and test results:''
''Sequence names, process parameters, and test results (Sequence no. 0000-0999):''
*'''(0001) HMDS Standard'''
*'''(0001) HMDS Standard'''
VPO temperature: 120°C <br>
VPO temperature: 120°C <br>
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In order to achieve thicker coatings of AZ MiR 701 (29cps) while minimizing edge bead problems, a method of waiting before spin-off is used on Spin Coater: Gamma UV. The spin coating process consists of three steps: dispense, waiting, and spin-off. The first step is dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates, and 5 ml for 150 mm substrates, respectively. In the waiting step the resist is "dried" at low spin speed without exhaust (in practice the exhaust is opened briefly every 15s in order to avoid triggering the exhaust alarm). The final spin-off step is short, but at relatively high spin speed,  with backside rinse the first half of the time. Soft baking is done at 90°C for 90s. Contact baking is used since the backside is clean. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask.
In order to achieve thicker coatings of AZ MiR 701 (29cps) while minimizing edge bead problems, a method of waiting before spin-off is used on Spin Coater: Gamma UV. The spin coating process consists of three steps: dispense, waiting, and spin-off. The first step is dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates, and 5 ml for 150 mm substrates, respectively. In the waiting step the resist is "dried" at low spin speed without exhaust (in practice the exhaust is opened briefly every 15s in order to avoid triggering the exhaust alarm). The final spin-off step is short, but at relatively high spin speed,  with backside rinse the first half of the time. Soft baking is done at 90°C for 90s. Contact baking is used since the backside is clean. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask.


''Flow names, process parameters, and test results (Sequence no. 1000-1999):''
''Sequence names, process parameters, and test results (Sequence no. 1000-1999):''
*'''(1410) DCH 100mm MiR 701 1.5um'''
*'''(1410) DCH 100mm MiR 701 1.5um'''
*'''(1411) DCH 100mm MiR 701 1.5um HMDS'''
*'''(1411) DCH 100mm MiR 701 1.5um HMDS'''
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In order to achieve thicker coatings of AZ nLOF 2020 while minimizing edge bead problems, a method of waiting before spin-off is used on Spin Coater: Gamma UV. The spin coating process consists of three steps: dispense, waiting, and spin-off. The first step is dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates, and 5 ml for 150 mm substrates, respectively. In the waiting step the resist is "dried" at low spin speed without exhaust (in practice the exhaust is opened briefly every 15s in order to avoid triggering the exhaust alarm). The final spin-off step is short, but at relatively high spin speed,  with backside rinse the first half of the time. Soft baking is done at 110°C for 120s. Contact baking is used since the backside has been cleaned. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask.
In order to achieve thicker coatings of AZ nLOF 2020 while minimizing edge bead problems, a method of waiting before spin-off is used on Spin Coater: Gamma UV. The spin coating process consists of three steps: dispense, waiting, and spin-off. The first step is dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates, and 5 ml for 150 mm substrates, respectively. In the waiting step the resist is "dried" at low spin speed without exhaust (in practice the exhaust is opened briefly every 15s in order to avoid triggering the exhaust alarm). The final spin-off step is short, but at relatively high spin speed,  with backside rinse the first half of the time. Soft baking is done at 110°C for 120s. Contact baking is used since the backside has been cleaned. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask.


''Flow names, process parameters, and test results (Sequence no. 2000-2999):''
''Sequence names, process parameters, and test results (Sequence no. 2000-2999):''
*'''(2410) DCH 100mm nLOF 2020 1.5um'''
*'''(2410) DCH 100mm nLOF 2020 1.5um'''
*'''(2411) DCH 100mm nLOF 2020 1.5um HMDS'''
*'''(2411) DCH 100mm nLOF 2020 1.5um HMDS'''
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In order to achieve thicker coatings of AZ 5214E while minimizing edge bead problems, a method of waiting before spin-off is used on Spin Coater: Gamma UV. The spin coating process consists of three steps: dispense, waiting, and spin-off. The first step is dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates, and 5 ml for 150 mm substrates, respectively. In the waiting step the resist is "dried" at low spin speed without exhaust (in practice the exhaust is opened briefly every 15s in order to avoid triggering the exhaust alarm). The final spin-off step is short, but at relatively high spin speed,  with backside rinse the first half of the time. Soft baking is done at 100°C for 90s in 1mm proximity. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask.
In order to achieve thicker coatings of AZ 5214E while minimizing edge bead problems, a method of waiting before spin-off is used on Spin Coater: Gamma UV. The spin coating process consists of three steps: dispense, waiting, and spin-off. The first step is dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates, and 5 ml for 150 mm substrates, respectively. In the waiting step the resist is "dried" at low spin speed without exhaust (in practice the exhaust is opened briefly every 15s in order to avoid triggering the exhaust alarm). The final spin-off step is short, but at relatively high spin speed,  with backside rinse the first half of the time. Soft baking is done at 100°C for 90s in 1mm proximity. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask.


''Flow names, process parameters, and test results (Sequence no. 3000-3999):''
''Sequence names, process parameters, and test results (Sequence no. 3000-3999):''
*'''(3410) DCH 100mm 5214E 1.5um'''
*'''(3410) DCH 100mm 5214E 1.5um'''
*'''(3411) DCH 100mm 5214E 1.5um HMDS'''
*'''(3411) DCH 100mm 5214E 1.5um HMDS'''
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Spin coating of standard thicknesses (5 - 10 µm) of AZ 4562 dispensed from syringe on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 300 rpm, using a volume of 3 ml for 100 mm substrates, and 6 ml for 150 mm substrates, respectively. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds with backside rinse. The wafer dried at 800 rpm for 15s before stopping. Soft baking is done at 100°C in 1 mm proximity for a thickness dependent time. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask.
Spin coating of standard thicknesses (5 - 10 µm) of AZ 4562 dispensed from syringe on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 300 rpm, using a volume of 3 ml for 100 mm substrates, and 6 ml for 150 mm substrates, respectively. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds with backside rinse. The wafer dried at 800 rpm for 15s before stopping. Soft baking is done at 100°C in 1 mm proximity for a thickness dependent time. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask.


''Flow names, process parameters, and test results (Sequence no. 4000-4999):''
''Sequence names, process parameters, and test results (Sequence no. 4000-4999):''
*'''(4460) DCH 100mm 4562 6.2um'''
*'''(4460) DCH 100mm 4562 6.2um'''
*'''(4461) DCH 100mm 4562 6.2um HMDS'''
*'''(4461) DCH 100mm 4562 6.2um HMDS'''
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