Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_blazed_gratings click here]'''  
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''by bghe@danchip''
''by bghe@danchip''
<gallery caption="Some examples of blazed gratingens in fused silica etched with Cr and DUV resist as masking layer "  widths="300px" heights="250px">
<gallery caption="Some examples of blazed gratingens in fused silica etched with Cr and DUV resist as masking layer "  widths="300px" heights="250px">

Revision as of 09:35, 27 May 2015

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by bghe@danchip

  • Some examples of blazed gratingens in fused silica etched with Cr and DUV resist as masking layer
  • 30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 *Rotation speed 0 rpm *Angle: -35 *I(N)=400mA *RF power=1300W *I(B)=300mA *V(B)=300V *V(AC,B)=500V *Ar(N) flow=5sccm *Ar(B) flow=5sccm *CHF3 flow=15sccm
    30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm
  • 45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 *Rotation speed 0 rpm *Angle: -35 *I(N)=400mA *RF power=1300W *I(B)=300mA *V(B)=300V *V(AC,B)=500V *Ar(N) flow=5sccm *Ar(B) flow=5sccm *CHF3 flow=15sccm
    45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm
  • 20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings *Rotation speed 0 rpm *Angle: -35 *I(N)=550mA *RF power=1300W *I(B)=500mA *V(B)=600V *V(AC,B)=400V *Ar(N) flow=5sccm *Ar(B) flow=10sccm *CHF3 flow=0sccm
    20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=550mA
    *RF power=1300W
    *I(B)=500mA
    *V(B)=600V
    *V(AC,B)=400V
    *Ar(N) flow=5sccm
    *Ar(B) flow=10sccm
    *CHF3 flow=0sccm
  • 15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3 *Rotation speed 0 rpm *Angle: -35 *I(N)=400mA *RF power=1300W *I(B)=300mA *V(B)=300V *V(AC,B)=500V *Ar(N) flow=5sccm *Ar(B) flow=5sccm *CHF3 flow=15sccm
    15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm
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