Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
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==AZ 4562 coating== | ==AZ 4562 coating== | ||
Spin coating of standard thicknesses (5 - 10 µm) of AZ 4562 dispensed from syringe on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 300 rpm, using a volume of 3 ml for 100 mm substrates, and 6 ml for 150 mm substrates, respectively. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds with backside rinse. The wafer dried at 800 rpm for 15s before stopping. Soft baking is done at 100°C in 1 mm proximity for a thickness dependent time. | Spin coating of standard thicknesses (5 - 10 µm) of AZ 4562 dispensed from syringe on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 300 rpm, using a volume of 3 ml for 100 mm substrates, and 6 ml for 150 mm substrates, respectively. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds with backside rinse. The wafer dried at 800 rpm for 15s before stopping. Soft baking is done at 100°C in 1 mm proximity for a thickness dependent time. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask. | ||
''Flow names, process parameters, and test results:'' | ''Flow names, process parameters, and test results:'' | ||