Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
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|taran | |taran | ||
|SAT results. 6" wafer, no HMDS. 3 wafers measured: thickness is average of all 3; uniformity is worst case. 13 points on each wafer, exclusion zone 5mm. | |SAT results. 6" wafer, no HMDS. 3 wafers measured: thickness is average of all 3; uniformity is worst case. 13 points on each wafer, exclusion zone 5mm. | ||
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*'''(4410) DCH 100mm 4562 10um''' | |||
*'''(4411) DCH 100mm 4562 10um HMDS''' | |||
*'''(4610) DCH 150mm 4562 10um''' | |||
*'''(4611) DCH 150mm 4562 10um HMDS''' | |||
Spin-off: 2000 rpm. Soft bake: 300s. | |||
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" | |||
|- | |||
|-style="background:silver; color:black" | |||
!Substrate | |||
!Thickness | |||
!Uniformity (+/-) | |||
!Test date | |||
!Tester initials | |||
!Comments | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|9.982 µm | |||
|0.4% | |||
|20/3 2015 | |||
|taran | |||
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm. | |||
|} | |} | ||