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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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==AZ 4562 coating==
==AZ 4562 coating==
Spin coating of standard thicknesses (5 - 10 µm) of AZ 4562 dispensed from syringe on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates, and 5 ml for 150 mm substrates, respectively. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds. The wafer is decelerated at 2000 rpm/s before stopping. Soft baking is done at 100°C in 1 mm proximity for a thickness dependent time.
Spin coating of standard thicknesses (5 - 10 µm) of AZ 4562 dispensed from syringe on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 300 rpm, using a volume of 3 ml for 100 mm substrates, and 6 ml for 150 mm substrates, respectively. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds. The wafer is decelerated at 2000 rpm/s before stopping. Soft baking is done at 100°C in 1 mm proximity for a thickness dependent time.


''Flow names, process parameters, and test results:''
''Flow names, process parameters, and test results:''
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|1.507 µm
|6.209 µm
|1.0%
|1.0%
|20/3 2015
|19/3 2015
|taran
|taran
|SAT results. 4" wafer, no HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm.
|SAT results. 4" wafer, no HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm.
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|1.500 µm
|6.224 µm
|0.6%
|0.7%
|20/3 2015
|19/3 2015
|taran
|taran
|SAT results. 6" wafer, no HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 13 points on each wafer, exclusion zone 5mm.
|SAT results. 6" wafer, no HMDS. 3 wafers measured: thickness is average of all 3; uniformity is worst case. 13 points on each wafer, exclusion zone 5mm.
|}
|}
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