Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

@@ Line 343: / Line 343: @@
 |-style="background:WhiteSmoke; color:black"
 |Silicon with native oxide
-|1.507 µm
+|1.500 µm
-|1.0%
+|0.6%
 |20/3 2015
 |taran
-|SAT results. 6" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm.
+|SAT results. 4" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm.
 |-
 |-style="background:WhiteSmoke; color:black"
 |Silicon with native oxide
-|1.500 µm
+|1.507 µm
-|0.6%
+|1.0%
 |20/3 2015
 |taran
-|SAT results. 4" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm.
+|SAT results. 6" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 13 points on each wafer, exclusion zone 5mm.
 |}