Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
Appearance
| Line 409: | Line 409: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|Silicon with native oxide | |Silicon with native oxide | ||
|4. | |4.171 µm | ||
|0. | |0.7% | ||
|20/3 2015 | |20/3 2015 | ||
|taran | |taran | ||
| | |4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|Silicon with native oxide | |Silicon with native oxide | ||
|4. | |4.194 µm | ||
|0. | |0.5% | ||
|20/3 2015 | |20/3 2015 | ||
|taran | |taran | ||
| | |6" wafer, no HMDS. 13 points on one wafer, exclusion zone 5mm | ||
|} | |} | ||