Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
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*'''(3610) DCH 150mm 5214E 1.5um''' | *'''(3610) DCH 150mm 5214E 1.5um''' | ||
*'''(3611) DCH 150mm 5214E 1.5um HMDS''' | *'''(3611) DCH 150mm 5214E 1.5um HMDS''' | ||
Spin-off: | Spin-off: 4500 rpm. | ||
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" | {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" | ||
| Line 363: | Line 363: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|Silicon with native oxide | |Silicon with native oxide | ||
| | |1.507 µm | ||
|0 | |1.0% | ||
|20/3 2015 | |20/3 2015 | ||
|taran | |taran | ||
|4" wafer, | |SAT results. 6" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm. | ||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|1.500 µm | |||
|0.6% | |||
|20/3 2015 | |||
|taran | |||
|SAT results. 4" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm. | |||
|} | |} | ||