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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

Taran (talk | contribs)
Taran (talk | contribs)
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*'''(3610) DCH 150mm 5214E 1.5um'''
*'''(3610) DCH 150mm 5214E 1.5um'''
*'''(3611) DCH 150mm 5214E 1.5um HMDS'''
*'''(3611) DCH 150mm 5214E 1.5um HMDS'''
Spin-off: ???? rpm.
Spin-off: 4500 rpm.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
Line 363: Line 363:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|2.201 µm
|1.507 µm
|0.5%
|1.0%
|20/3 2015
|20/3 2015
|taran
|taran
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|SAT results. 6" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm.
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|1.500 µm
|0.6%
|20/3 2015
|taran
|SAT results. 4" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 9 points on each wafer, exclusion zone 5mm.
|}
|}