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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

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==AZ 5214E coating==
==AZ 5214E coating==
Spin coating of AZ nLOF 2020 on Spin Track 2 is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. At the moment, the HMDS priming is equal to the standard priming, but this may be subject to change as our process knowledge grows. Spin coating uses dynamic dispence of 4 ml resist at 1000 rpm, followed by spin-of at a thickness dependent spin speed for a thickness dependent time. The wafer is deaccelerated at 1000 rpm/s for 5 seconds before stopping. Soft baking is done at 110°C for 60s, normally as a contact bake. In order to enable double-sided coating of nLOF, recipes have been created witch use a 1mm proximity bake for the softbake (prox SB).
Spin coating of standard thicknesses (1.5 - 3 µm) of AZ nLOF 2020 on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds. The wafer is decelerated at 1000 rpm/s before stopping. Soft baking is done at 90°C for 60s.


''Flow names, process parameters, and test results:''
''Flow names, process parameters, and test results:''
*'''T2 nLOF 2020 1,5um no HMDS'''
*'''(3410) DCH 100mm 5214E 1.5um'''
*'''T2 nLOF 2020 1,5um prox SB no HMDS'''
*'''(3411) DCH 100mm 5214E 1.5um HMDS'''
*'''T2 nLOF 2020 1,5um with HMDS'''
*'''(3610) DCH 150mm 5214E 1.5um'''
Spin-of: 30 s at 6700 rpm.
*'''(3611) DCH 150mm 5214E 1.5um HMDS'''
Spin-off: ???? rpm.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
|-
|-
|-
|-style="background:silver; color:black"
|-style="background:silver; color:black"
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|1.483
|1.559
|0.48%
|0.4%
|5/9 2013
|27/3 2015
|taran
|taran
|with HMDS. Average of 3 wafers
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
 
|}
|}




*'''T2 nLOF 2020 2um no HMDS'''
*'''(3420) DCH 100mm 5214E 2.2um'''
*'''T2 nLOF 2020 2um prox SB no HMDS'''
*'''(3421) DCH 100mm 5214E 2.2um HMDS'''
*'''T2 nLOF 2020 2um with HMDS'''
*'''(3620) DCH 150mm 5214E 2.2um'''
Spin-of: 30 s at 3800 rpm.
*'''(3621) DCH 150mm 5214E 2.2um HMDS'''
Spin-off: ???? rpm.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
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!Comments
!Comments
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|1.947
|2.041 µm
|0.56%
|0.4%
|5/9 2013
|27/3 2015
|taran
|taran
|with HMDS. Average of 3 wafers
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|1.910
|0.4%
|17/02 2015
|chasil
|with HMDS. Average of 3 wafers
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|1.868
|0.5%
|1/04 2015
|chasil
|with HMDS. Average of 3 wafers
 
|}
|}


<br>In order to achieve thicker coatings of AZ 5214E while minimizing edge bead problems, a method of waiting before spin-off is used on Spin Coater: Gamma UV. The spin coating process consists of three steps: dispense, waiting, and spin-off. The first step is dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates. In the waiting step the resist is "dried" at low spin speed without exhaust (in practice the exhaust is opened briefly every 15s in order to avoid triggering the exhaust alarm). The final spin-off step is short, but at relatively high spin speed,  with backside rinse the first half of the time. Soft baking is done at 110°C for 120s. Contact baking is used since the backside has been cleaned. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask.


*'''T2 nLOF 2020 3um no HMDS'''
''Flow names, process parameters, and test results:''
*'''T2 nLOF 2020 3um prox SB no HMDS'''
*'''(3440) DCH 100mm 5214E 4.2um'''
*'''T2 nLOF 2020 3um with HMDS'''
*'''(3441) DCH 100mm 5214E 4.2um HMDS'''
Spin-of: 30 s at 1700 rpm.
*'''(3640) DCH 150mm 5214E 4.2um'''
*'''(3641) DCH 150mm 5214E 4.2um HMDS'''
Waiting: 60s @ 600 rpm. Spin-off: 10s @ 3500 rpm.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
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!Tester initials
!Tester initials
!Comments
!Comments
|-
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|2.948
|4.076 µm
|0.62%
|0.7%
|5/9 2013
|27/3 2015
|taran
|taran
|with HMDS. Average of 3 wafers
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
 
|}
|}
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