Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
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<br>In order to achieve thicker coatings of AZ MiR 701 (29cps) while minimizing edge bead problems, a method of waiting before spin-off is on Spin Coater: Gamma UV. The spin coating process consists of three steps: dispense, waiting, and spin-off. The first step is dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates. In the waiting step the resist is "dried" at low spin speed, e.g. 600 rpm, without exhaust (in practice the exhaust is opened briefly every 15s in order to avoid triggering the exhaust alarm). The final spin-off step is short, e.g. 10s, but at relatively high spin speed, e.g. 3500 rpm, with backside rinse the first half of the time. Soft baking is done at 90°C for 90s. Contact baking is used since the backside is clean. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask. | <br>In order to achieve thicker coatings of AZ MiR 701 (29cps) while minimizing edge bead problems, a method of waiting before spin-off is used on Spin Coater: Gamma UV. The spin coating process consists of three steps: dispense, waiting, and spin-off. The first step is dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates. In the waiting step the resist is "dried" at low spin speed, e.g. 600 rpm, without exhaust (in practice the exhaust is opened briefly every 15s in order to avoid triggering the exhaust alarm). The final spin-off step is short, e.g. 10s, but at relatively high spin speed, e.g. 3500 rpm, with backside rinse the first half of the time. Soft baking is done at 90°C for 90s. Contact baking is used since the backside is clean. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask. | ||
''Flow names, process parameters, and test results:'' | ''Flow names, process parameters, and test results:'' | ||