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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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==AZ nLOF 2020 coating==
==AZ nLOF 2020 coating==
Spin coating of AZ nLOF 2020 on Spin Track 2 is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. At the moment, the HMDS priming is equal to the standard priming, but this may be subject to change as our process knowledge grows. Spin coating uses dynamic dispence of 4 ml resist at 1000 rpm, followed by spin-of at a thickness dependent spin speed for a thickness dependent time. The wafer is deaccelerated at 1000 rpm/s for 5 seconds before stopping. Soft baking is done at 110°C for 60s, normally as a contact bake. In order to enable double-sided coating of nLOF, recipes have been created witch use a 1mm proximity bake for the softbake (prox SB).
Spin coating of standard thicknesses (1.5 - 3 µm) of AZ nLOF 2020 on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds. The wafer is decelerated at 1000 rpm/s before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity.


''Flow names, process parameters, and test results:''
''Flow names, process parameters, and test results:''
*'''T2 nLOF 2020 1,5um no HMDS'''
*'''(2410) DCH 100mm nLOF 2020 1.5um'''
*'''T2 nLOF 2020 1,5um prox SB no HMDS'''
*'''(2411) DCH 100mm nLOF 2020 1.5um HMDS'''
*'''T2 nLOF 2020 1,5um with HMDS'''
*'''(2610) DCH 150mm nLOF 2020 1.5um'''
Spin-of: 30 s at 6700 rpm.
*'''(2611) DCH 150mm nLOF 2020 1.5um HMDS'''
Spin-off: 4600 rpm.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
|-
|-
|-
|-style="background:silver; color:black"
|-style="background:silver; color:black"
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|1.483
|1.513
|0.48%
|0.6%
|5/9 2013
|26/3 2015
|taran
|taran
|with HMDS. Average of 3 wafers
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
 
|}
|}




*'''T2 nLOF 2020 2um no HMDS'''
*'''(2420) DCH 100mm nLOF 2020 2um'''
*'''T2 nLOF 2020 2um prox SB no HMDS'''
*'''(2421) DCH 100mm nLOF 2020 2um HMDS'''
*'''T2 nLOF 2020 2um with HMDS'''
*'''(2620) DCH 150mm nLOF 2020 2um'''
Spin-of: 30 s at 3800 rpm.
*'''(2621) DCH 150mm nLOF 2020 2um HMDS'''
Spin-off: 2600 rpm.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
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!Comments
!Comments
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|1.947
|2.019 µm
|0.56%
|1.5%
|5/9 2013
|26/3 2015
|taran
|taran
|with HMDS. Average of 3 wafers
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|1.910
|0.4%
|17/02 2015
|chasil
|with HMDS. Average of 3 wafers
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|1.868
|0.5%
|1/04 2015
|chasil
|with HMDS. Average of 3 wafers
 
|}
|}


<br>In order to achieve thicker coatings of AZ MiR 701 (29cps) while minimizing edge bead problems, a method of waiting before spin-off is on Spin Coater: Gamma UV. The spin coating process consists of three steps: dispense, waiting, and spin-off. The first step is dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100 mm substrates. In the waiting step the resist is "dried" at low spin speed, e.g. 600 rpm, without exhaust (in practice the exhaust is opened briefly every 15s in order to avoid triggering the exhaust alarm). The final spin-off step is short, e.g. 10s, but at relatively high spin speed, e.g. 3500 rpm, with backside rinse the first half of the time. Soft baking is done at 90°C for 90s. Contact baking is used since the backside is clean. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask.


*'''T2 nLOF 2020 3um no HMDS'''
''Flow names, process parameters, and test results:''
*'''T2 nLOF 2020 3um prox SB no HMDS'''
*'''(2440) DCH 100mm nLOF 2020 4um'''
*'''T2 nLOF 2020 3um with HMDS'''
*'''(2441) DCH 100mm nLOF 2020 4um HMDS'''
Spin-of: 30 s at 1700 rpm.
*'''(2640) DCH 150mm nLOF 2020 4um'''
*'''(2641) DCH 150mm nLOF 2020 4um HMDS'''
Waiting: 75s @ 600 rpm. Spin-off: 10s @ 3000 rpm.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
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!Tester initials
!Tester initials
!Comments
!Comments
|-
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|2.948
|3.992 µm
|0.62%
|0.7%
|5/9 2013
|26/3 2015
|taran
|taran
|with HMDS. Average of 3 wafers
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
 
|}
|}


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