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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,526 edits
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==AZ MiR 701 (29cps) coating==
==AZ MiR 701 (29cps) coating==
Spin coating of thin coatings of AZ MiR 701 (29cps) on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100mm substrates. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds. The wafer is decelerated at 1000 rpm/s before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity.
Spin coating of standard thicknesses (1.3 - 2.5 µm) of AZ MiR 701 (29cps) on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100mm substrates. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds. The wafer is decelerated at 1000 rpm/s before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity.


''Flow names, process parameters, and test results:''
''Flow names, process parameters, and test results:''
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|taran
|taran
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|}
*'''T1 MiR 701 2um no HMDS'''
*'''T1 MiR 701 2um with HMDS'''
Spin-off: 30 s at 2600 rpm.
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
!Substrate
!Thickness
!Uniformity (+/-)
!Test date
!Tester initials
!Comments
|-
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|2.019
|0.42%
|5/9 2013
|taran
|with HMDS. Average of 3 wafers
|}
|}


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