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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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==AZ MiR 701 (29cps) coating==
==AZ MiR 701 (29cps) coating==
Spin coating of AZ MiR 701 (29cps) on Spin Track 1 is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. At the moment, the HMDS priming is equal to the standard priming, but this may be subject to change as our process knowledge grows. Spin coating uses dynamic dispence of 4 ml resist at 800 rpm, followed by spin-off at a thickness dependent spin speed for a thickness dependent time. The wafer is deaccelerated at 1000 rpm/s for 5 seconds before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity.
Spin coating of thin coatings of AZ MiR 701 (29cps) on Spin Coater: Gamma UV is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. Spin coating uses dynamic dispense of resist at 800 rpm, using a volume of 3 ml for 100mm substrates. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds. The wafer is decelerated at 1000 rpm/s before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity.


''Flow names, process parameters, and test results:''
''Flow names, process parameters, and test results:''
*'''T1 MiR 701 1um no HMDS'''
*'''(1001) DCH 100mm MiR 701 1.5um'''
*'''T1 MiR 701 1um with HMDS'''
*'''(1002) DCH 100mm MiR 701 1.5um HMDS'''
Spin-off: 60 s at 9990 rpm.
*'''(1101) DCH 150mm MiR 701 1.5um'''
*'''(1102) DCH 150mm MiR 701 1.5um HMDS'''
Spin-off: 4600 rpm.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|1.053
|1.513
|0.33%
|0.6%
|5/9 2013
|26/3 2015
|taran
|taran
|with HMDS. Average of 3 wafers
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|}
|}




*'''T1 MiR 701 1,5um no HMDS'''
*'''(1011) DCH 100mm MiR 701 2um'''
*'''T1 MiR 701 1,5um with HMDS'''
*'''(1012) DCH 100mm MiR 701 2um HMDS'''
Spin-off: 30 s at 5000 rpm.
*'''(1111) DCH 150mm MiR 701 2um'''
*'''(1112) DCH 150mm MiR 701 2um HMDS'''
Spin-off: 2600 rpm.


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!Tester initials
!Tester initials
!Comments
!Comments
|-
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|1.525 µm
|2.019 µm
|0.7%
|1.5%
|22/8 2013
|26/3 2015
|taran
|taran
|with HMDS. Average of 4 wafers
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|1.528 µm
|0.2%
|17/02 2015
|chasil
|with HMDS. Average of 3 wafers
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|1.472 µm
|0.2%
|1/04 2015
|chasil
|with HMDS. Average of 3 wafers
|}
|}


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