Specific Process Knowledge/Characterization/Sample preparation: Difference between revisions

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 ![[image:FRSTO 1umSiO2 AOE 4 Tilt20degrees C6 L9 04.jpg|300x300px|thumb|left|
   Tilt angle 20 degree. Close up. Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. The Silicon Dioxide sidewall is corrugated.
+]]
+|-
+|}
+{| border="1" cellspacing="1" cellpadding="1" align="middle"
+![[image:StackedSlices.jpg|300x300px|thumb|left|
+ Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. The edges are nicely defined, though corrugated on the 100 nm scale.
+]]
+![[image:StackedSlicesWithFrame.jpg|300x300px|thumb|left|
+ Close up. Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. Residues of the SiO2 etching are apperent on top of the SiO2, i.e. particles a few nanometers in diameter. Most probably it is sputtered and redopsited Silicon Dioxide, but not confirmed. Attempts to remove them in 7-Up or HCl failed.
+]]
+![[image:WaferWithCast_2.jpg|300x300px|thumb|left|
+ Tilt angle 20 degree. Close up. Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. The Silicon Dioxide sidewall is corrugated.
+]]
+|-
+|}
+{| border="1" cellspacing="1" cellpadding="1" align="middle"
+![[image:StackedSlices.jpg|300x300px|thumb|left|
+ Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. The edges are nicely defined, though corrugated on the 100 nm scale.
+]]
+![[image:StackedSlicesWithFrame.jpg|300x300px|thumb|left|
+ Close up. Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. Residues of the SiO2 etching are apperent on top of the SiO2, i.e. particles a few nanometers in diameter. Most probably it is sputtered and redopsited Silicon Dioxide, but not confirmed. Attempts to remove them in 7-Up or HCl failed.
 ]]
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