Specific Process Knowledge/Characterization/Sample preparation: Difference between revisions

← Older edit Newer edit →

VisualWikitext

@@ Line 71: / Line 71: @@
 ==Example: Replica Molding of cross sections of DRIE etched cavities==
+==Etching of 1.1 µm SiO2 by 10 min m_res_ny: Corrugated sidewall==
+''by Frederik Stöhr @danchip''
+'''General Description'''<br>
+:Process date: Feb 2014<br>
+:Recipe: m_res_ny@0degrees<br>
+:Process time: 5:30 min<br>
+:Substrate: 525 µm Si + 1.1 µm thermal silicon oxide + HMDS (adhesion promoter) <br>
+:Mask: [XOP3] AZ positive resist 1.5 µm thick (6-inch aligner 3 sec exposure, 60 sec developer)<br>
+:Etch Load (Total Exposed SiO2): ~ 10 %<br>
+:Post process: O2 Plasma Ashing 10 min
+{| border="1" cellspacing="1" cellpadding="1" align="middle"
+![[image:FRSTO 1umSiO2 AOE 1 Top C6 L9 16.jpg|300x300px|thumb|left|
+ Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. The edges are nicely defined, though corrugated on the 100 nm scale.
+]]
+![[image:FRSTO 1umSiO2 AOE 5 Top C6 L9 14.jpg|300x300px|thumb|left|
+ Close up. Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. Residues of the SiO2 etching are apperent on top of the SiO2, i.e. particles a few nanometers in diameter. Most probably it is sputtered and redopsited Silicon Dioxide, but not confirmed. Attempts to remove them in 7-Up or HCl failed.
+]]
+![[image:FRSTO 1umSiO2 AOE 2 Tilt20degrees C6 L9 02.jpg|300x300px|thumb|left|
+ Tilt angle 20 degree. Close up. Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. The Silicon Dioxide sidewall is corrugated.
+]]
+![[image:FRSTO 1umSiO2 AOE 4 Tilt20degrees C6 L9 04.jpg|300x300px|thumb|left|
+ Tilt angle 20 degree. Close up. Bird View. Dark area is Silicon. Bright area is Silicon Dioxide. The Silicon Dioxide sidewall is corrugated.
+]]
+|-
+|}
+<br clear="all" />
+<br clear="all" />
 ==References==