Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings: Difference between revisions

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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
<gallery>


Image:IBE 30min -Cr1.jpg
<gallery widths="300px" heights="250px">
Image:after IBE 45min_A_34.jpg
 
Image:Edge_1.jpg
Image:IBE 30min -Cr1.jpg |30min etch with 100nm Cr mask
Image:15min+30min5.jpg
Image:after IBE 45min_A_34.jpg |45min etch with 100nm Cr mask
Image:Edge_1.jpg|20min etch with Krf resist, all resist is gone
Image:15min+30min5.jpg|15+30min etch with 50nm Cr mask


</gallery>
</gallery>

Revision as of 12:56, 12 May 2015

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THIS PAGE IS UNDER CONSTRUCTION

  • 30min etch with 100nm Cr mask
    30min etch with 100nm Cr mask
  • 45min etch with 100nm Cr mask
    45min etch with 100nm Cr mask
  • 20min etch with Krf resist, all resist is gone
    20min etch with Krf resist, all resist is gone
  • 15+30min etch with 50nm Cr mask
    15+30min etch with 50nm Cr mask
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