Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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|'''Etch rate''' | |'''Etch rate''' | ||
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*~ | *Wet thermal oxide:~80nm/min | ||
*~ | *PECVD1 (standard):~147nm/min | ||
*TEOS:~265nm/min | |||
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*Wet thermal oxide:~25nm/min | |||
*PECVD1 (standard):~87nm/min | |||
*TEOS:~153nm/min | |||
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*Wet thermal oxide:~80nm/min | |||
*PECVD1 (standard):~147nm/min | |||
*TEOS:~265nm/min | |||
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|'''Selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>''' | |'''Selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>''' | ||