Jump to content

Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD: Difference between revisions

← Older editNewer edit →
VisualWikitext
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,370 edits
No edit summary
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,370 edits
No edit summary
Line 57: Line 57:
Below some SEM images of anatase TiO<sub>2</sub> deposited on trenches are shown.
Below some SEM images of anatase TiO<sub>2</sub> deposited on trenches are shown.


<gallery caption="Anatase TiO<sub>2</sub> deposited on a Si sample with trenches. Temperature = 120 <sup>o</sup>C, number of cycles = 500. Trench width = 200 nm, trench depth = 4 \mum, i.e. the aspect ratio is 1:20. It is seen that the TiO<sub>2</sub> covrets the trenches very well" widths="250px" heights="250px" perrow="5">
<gallery caption="Anatase TiO<sub>2</sub> deposited on a Si sample with trenches. Temperature = 120 <sup>o</sup>C, number of cycles = 500. Trench width = 200 nm, trench depth = 4 \mum, i.e. the aspect ratio is 1:20. It is seen that the TiO<sub>2</sub> covrets the trenches very well" widths="350px" heights="350px" perrow="5">
image:ALD Al2O3 grow rate 150C.jpg| Temperature 150 <sup>o</sup>C.
image:SEM-TiO2-120C-1.jpg|
image:ALD Al2O3 grow rate 200C.jpg| Temperature 200 <sup>o</sup>C.
image:SEM-TiO2-120C-2.jpg|
image:ALD Al2O3 grow rate 250C.jpg| Temperature 250 <sup>o</sup>C.
image:SEM-TiO2-120C-3.jpg|
image:ALD Al2O3 grow rate 200C.jpg| Temperature 300 <sup>o</sup>C.
image:ALD Al2O3 grow rate 350C.jpg| Temperature 350 <sup>o</sup>C.
</gallery>
</gallery>


Below some SEM images of amorphous TiO<sub>2</sub> deposited on trenches are shown   
Below some SEM images of amorphous TiO<sub>2</sub> deposited on trenches are shown   


<gallery caption="Amorphous TiO<sub>2</sub> deposited a Si sample with trenches. Temperature = 350 <sup>o</sup>C, number of cycles = 500. Trench width = 200 nm, trench depth = 4 \mum, i.e. the aspect ratio is 1:20. It is seen that the TiO<sub>2</sub> covrets the trenches very well" widths="250px" heights="250px" perrow="5">
<gallery caption="Amorphous TiO<sub>2</sub> deposited a Si sample with trenches. Temperature = 300 <sup>o</sup>C, number of cycles = 500. Trench width = 200 nm, trench depth = 4 \mum, i.e. the aspect ratio is 1:20. It is seen that the TiO<sub>2</sub> covrets the trenches very well" widths="350px" heights="350px" perrow="5">
image:ALD Al2O3 grow rate 150C.jpg| Temperature 150 <sup>o</sup>C.
image:TiO2 trenches-300C-1.jpg|
image:ALD Al2O3 grow rate 200C.jpg| Temperature 200 <sup>o</sup>C.
image:TiO2 trenches-300C-2.jpg|
image:ALD Al2O3 grow rate 250C.jpg| Temperature 250 <sup>o</sup>C.
image:TiO2 trenches-300C-3.jpg|
image:ALD Al2O3 grow rate 200C.jpg| Temperature 300 <sup>o</sup>C.
image:ALD Al2O3 grow rate 350C.jpg| Temperature 350 <sup>o</sup>C.
</gallery>
</gallery>


Evgeniy Shkondin, DTU Danchip, 2014.
Evgeniy Shkondin, DTU Danchip, 2014.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD"