Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD: Difference between revisions
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image:ALD_TiO2_grow_rate_250C.jpg| Temperature 200 <sup>o</sup>C. | image:ALD_TiO2_grow_rate_250C.jpg| Temperature 200 <sup>o</sup>C. | ||
image:ALD_TiO2_grow_rate_350C.jpg| Temperature 250 <sup>o</sup>C. | image:ALD_TiO2_grow_rate_350C.jpg| Temperature 250 <sup>o</sup>C. | ||
</gallery> | |||
Below some SEM images of anatase TiO<sub>2</sub> deposited on trenches are shown. | |||
<gallery caption="Anatase TiO<sub>2</sub> deposited on a Si sample with trenches. Temperature = 120 <sup>o</sup>C, number of cycles = 500. Trench width = 200 nm, trench depth = 4 \mum, i.e. the aspect ratio is 1:20. It is seen that the TiO<sub>2</sub> covrets the trenches very well" widths="250px" heights="250px" perrow="5"> | |||
image:ALD Al2O3 grow rate 150C.jpg| Temperature 150 <sup>o</sup>C. | |||
image:ALD Al2O3 grow rate 200C.jpg| Temperature 200 <sup>o</sup>C. | |||
image:ALD Al2O3 grow rate 250C.jpg| Temperature 250 <sup>o</sup>C. | |||
image:ALD Al2O3 grow rate 200C.jpg| Temperature 300 <sup>o</sup>C. | |||
image:ALD Al2O3 grow rate 350C.jpg| Temperature 350 <sup>o</sup>C. | |||
</gallery> | |||
Below some SEM images of amorphous TiO<sub>2</sub> deposited on trenches are shown | |||
<gallery caption="Amorphous TiO<sub>2</sub> deposited a Si sample with trenches. Temperature = 350 <sup>o</sup>C, number of cycles = 500. Trench width = 200 nm, trench depth = 4 \mum, i.e. the aspect ratio is 1:20. It is seen that the TiO<sub>2</sub> covrets the trenches very well" widths="250px" heights="250px" perrow="5"> | |||
image:ALD Al2O3 grow rate 150C.jpg| Temperature 150 <sup>o</sup>C. | |||
image:ALD Al2O3 grow rate 200C.jpg| Temperature 200 <sup>o</sup>C. | |||
image:ALD Al2O3 grow rate 250C.jpg| Temperature 250 <sup>o</sup>C. | |||
image:ALD Al2O3 grow rate 200C.jpg| Temperature 300 <sup>o</sup>C. | |||
image:ALD Al2O3 grow rate 350C.jpg| Temperature 350 <sup>o</sup>C. | |||
</gallery> | </gallery> | ||
Evgeniy Shkondin, DTU Danchip, 2014. | Evgeniy Shkondin, DTU Danchip, 2014. | ||