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Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD: Difference between revisions

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For Si wafers, anatase TiO<sub>2</sub> is best grown wafers without native oxide (do an BHF etch), and amorphous TiO<sub>2</sub> is best grown on wafers with native oxide.
For Si wafers, anatase TiO<sub>2</sub> is best grown wafers without native oxide (do an BHF etch), and amorphous TiO<sub>2</sub> is best grown on wafers with native oxide.


XPS measurements shows that at temperaturs below 120 <sup>o</sup>C the TiO<sub>2</sub> layer will be contaminated by Cl molecules from the TiCl<sub>4</sub> precursor.
XPS measurements shows that at temperaturs below 120 <sup>o</sup>C the TiO<sub>2</sub> layer will be contaminated with about 1-3 % chlorine molecules from the TiCl<sub>4</sub> precursor.




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