Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD: Difference between revisions

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+The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.
+A low temperatures between 120 <sup>o</sup>C and 150 <sup>o</sup>C an anatase TiO<sub>2</sub> layer is grow in the ALD, and at higher temperatures between 300 <sup>o</sup>C and 350 <sup>o</sup>C and amorphous TiO<sub>2</sub> layer is grown in the ALD. At temperatures between 150 <sup>o</sup>C and 300 <sup>o</sup>C the TiO<sub>2</sub> layer will be a mixture of both anatase and amorphous TiO<sub>2</sub>.
+SEM images of both anatase and amorphous TiO<sub>2</sub> are shown below.
+For Si wafers, anatase TiO<sub>2</sub> is best grown wafers without native oxide (do an BHF etch), and amorphous TiO<sub>2</sub> is best grown on wafers with native oxide.
+XPS measurements shows that at temperaturs below 120 <sup>o</sup>C the TiO<sub>2</sub> layer will be contaminated by Cl molecules from the TiCl<sub>4</sub> precursor.
-The ALD window for depostion of Titanium oxide ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C. XPS measurements shows that at temperatures below 120 <sup>o</sup>C the TiO<sub>3</sub> layer will be contaminated by Cl molecules.
 All results shown on this page have been obtained using the "TiO2" recipe on new Si(100) wafers with native oxide: