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The ALD window for depostion of Titanium oxide ranges from 120 ^oC to 350 ^oC. XPS measurements shows that at temperatures below 120 ^oC the TiO₃ layer will be contaminated by Cl molecules.

All results shown on this page have been obtained using the "TiO2" recipe on new Si(100) wafers with native oxide:

Recipe: TiO2

Temperature: 150 ^oC - 350 ^oC

	TMA	H₂O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.1 s	0.1 s
Purge time	3.0 s	4.0 s

In the graphs below the Al₂O₃ thickness as function of number of cycles for deposition temperatures between 150 ^oC and 350 ^oC can be seen. From the equations the number of cycles required for a certain thickess can be calculated.

Aluminium oxide thickness as function of number of cycles
Temperature 150 ^oC.
Temperature 200 ^oC.
Temperature 250 ^oC.
Temperature 300 ^oC.
Temperature 350 ^oC.

In the graphs below the TiO₂ thickness as function of number of cycles for deposition temperatures between 150 ^oC and 350 ^oC can be seen. From the equations the number of cycles required for a certain thickess can be calculated.

Titanium oxide thickness as function of number of cycles
Temperature 150 ^oC.
Temperature 200 ^oC.
Temperature 250 ^oC.

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 <gallery caption="Aluminium oxide thickness as function of number of cycles" widths="220px" heights="220px" perrow="5">
-image:ALD_TiO2_grow_rate_150C.tif| Temperature 150 <sup>o</sup>C.
+image:ALD_TiO2_grow_rate_150C.jpg| Temperature 150 <sup>o</sup>C.
 image:ALD Al2O3 grow rate 200C.jpg| Temperature 200 <sup>o</sup>C.
 image:ALD Al2O3 grow rate 250C.jpg| Temperature 250 <sup>o</sup>C.