Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|CSAR AR-P6200 AllResist, | |CSAR AR-P6200 AllResist, 4000 rpm, 60s, softbaked 60s @ 150degC | ||
|JBX9500 E-2, 2nA aperture 5, dose 300 µC/cm2, L1: 1st set of Vernier scales, 6 global marks and 4 chip marks in every chip | |JBX9500 E-2, 2nA aperture 5, dose 300 µC/cm2, L1: 1st set of Vernier scales, 6 global marks and 4 chip marks in every chip | ||
|AR-600-546, 60 s | |AR-600-546, 60 s | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|CSAR AR-P6200 AllResist, | |CSAR AR-P6200 AllResist, 4000 rpm, 60s, softbaked 60s @ 150degC | ||
|JBX9500 E-2, 2nA aperture 5, dose 300 µC/cm2, L2: 2nd set of Vernier scales aligned to 2 global marks and 4 chip marks in every chip (scan width 10 µm) | |JBX9500 E-2, 2nA aperture 5, dose 300 µC/cm2, L2: 2nd set of Vernier scales aligned to 2 global marks and 4 chip marks in every chip (scan width 10 µm) | ||
|AR-600-546, 60 s | |AR-600-546, 60 s | ||