Specific Process Knowledge/Wafer cleaning/7-up & Piranha: Difference between revisions
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== | ==Cleaning of wafers or masks== | ||
Cleaning of wafers or masks with sulphuric acid can be done either in a dedicated tank "7-up" or in the fumehood in a beaker "Piranda": | |||
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Revision as of 15:15, 14 February 2008
Cleaning of wafers or masks
Cleaning of wafers or masks with sulphuric acid can be done either in a dedicated tank "7-up" or in the fumehood in a beaker "Piranda":
7-up | Piranha | |
---|---|---|
General description |
Etch of pure Gold with or without photoresist mask. |
Etch of pure Gold (as stripper). |
Chemical solution | KJ:J:HO (100g:25g:500ml) | HCl:HNO (3:1) |
Process temperature | 20 oC | 20 oC |
Possible masking materials |
Photoresist (1.5 µm AZ5214E) |
Unmasked - used as a stripper |
Etch rate |
~100 nm/min |
~(??) nm/min - fast etch |
Batch size |
1-5 4" wafers at a time |
1-5 4" wafer at a time |
Size of substrate |
2-6" wafers |
2-6" wafers |