Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

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 == Overlay accuracy (layer to layer stitching) ==
-In this experiment, a set of Vernier marks (L1) were exposed along with global marks and chip marks in appr 170 nm CSAR. This layer was developed, metalized and lift-off performed with 4 second ultrasonic. A new layer of resist (appr 170 nm CSAR) was spin coated onto the wafer. A second set of Vernier marks (L2) was aligned to the two gloabl marks and 4 chip marks and exposed. Layer 2 was developed, metalized and lift-off performed with 4 second ultrasonic. The final pattern SEM inspected in Zeiss Supra 60VP.
+In this experiment, a set of Vernier marks (L1) were exposed along with global marks and chip marks in appr 170 nm CSAR. This layer was developed, metalized and lift-off. A new layer of resist (appr 170 nm CSAR) was spin coated onto the wafer. A second set of Vernier marks (L2) was aligned to two gloabl marks and 4 chip marks and exposed. Layer 2 was developed, metalized and lift-off. The final pattern SEM inspected in Zeiss Supra 60VP.
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+The Vernier scales were distributed over the entire writing field: C = center, UR/LR/LL/UL = Upper/Lower Right/Left, MN/ME/MS/MW = Middle North/East/South/West.