Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]'''  
[[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]]


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Revision as of 10:54, 20 April 2015

Feedback to this page: click here

How to calculate the tooling factor. Taken from the manufacture manual
Material parameters for calculating the tooling factor
Material Density Z ratio
TiO2 4.260 0.400
SiO2 2.648 1.000
Si 2.320 0.712


Settings for Crystal thickness monitor 1
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
22-7-2014 1.573 (wafer center)
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3


Settings for Crystal thickness monitor 2
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
A A1 A2 A3
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3
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