Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions
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*~26 Å/min (Si-rich Si<sub>3</sub>N<sub>4</sub>) | *~26 Å/min (Si-rich Si<sub>3</sub>N<sub>4</sub>) | ||
*~? Å/min (Thermal oxide) | *~? Å/min (Thermal oxide) | ||
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|'''Selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>''' | |||
|~21 | |||
|<21 | |||
|- | |- | ||
|'''Batch size''' | |'''Batch size''' | ||