Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions

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# BHF  
# BHF  
#  
# Cold RCA1 (as stripper)




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!  
!  
! BHF
! BHF
!  
! Cold RCA1
|-  
|-  
|'''General description'''
|'''General description'''
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Etch of titanium with or without photoresist mask.
Etch of titanium with or without photoresist mask.
|
|
Etch of
Etch of titanium (as stripper)
|-
|-
|'''Chemical solution'''
|'''Chemical solution'''
|HF:NH<math>_4</math>F   
|HF:NH<math>_4</math>F   
|.
|NH3OH:H2O2:H2O - 1:1:5
|-
|-
|'''Process temperature'''
|'''Process temperature'''
|Room temperature
|Room temperature
 
|Room temperature
|


|-
|-
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|
|
Photoresist (1.5 µm AZ5214E)
Photoresist (1.5 µm AZ5214E)
|
|None
.
|-
|-
|'''Etch rate'''
|'''Etch rate'''
|
|
?
Not known (it bubbles while etching)
|
|
?
Not known
|-
|-
|'''Batch size'''
|'''Batch size'''

Revision as of 10:11, 11 February 2008

Etching of Titanium

Etching of Titanium is done wet at Danchip making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4 or in the PP-etch bath in the fume hood in cleanroom 2. We have ?:

  1. BHF
  2. Cold RCA1 (as stripper)


Comparing the two solutions

BHF Cold RCA1
General description

Etch of titanium with or without photoresist mask.

Etch of titanium (as stripper)

Chemical solution HF:NHF NH3OH:H2O2:H2O - 1:1:5
Process temperature Room temperature Room temperature
Possible masking materials

Photoresist (1.5 µm AZ5214E)

None
Etch rate

Not known (it bubbles while etching)

Not known

Batch size

1-25 wafers at a time

1-25 wafer at a time

Size of substrate

4" wafers

4" wafers

Allowed materials

No restrictions when used in beaker or PP-etch bath in the fume hood in cleanroom 2.

  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist