Specific Process Knowledge/Characterization: Difference between revisions
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*[[/SEM FEI QUANTA 200 3D|FIB-SEM FEI QUANTA 200 3D]] | *[[/SEM FEI QUANTA 200 3D|FIB-SEM FEI QUANTA 200 3D]] | ||
*[[/SEM FEI Nova 600 NanoSEM|SEM FEI Nova 600 NanoSEM]] | |||
*[[/SEM: Scanning Electron Microscopy |SEM LEO]] | *[[/SEM: Scanning Electron Microscopy |SEM LEO]] | ||
*[[/SEM: Scanning Electron Microscopy |SEM JEOL]] | *[[/SEM: Scanning Electron Microscopy |SEM JEOL]] | ||
*[[/SEM: Scanning Electron Microscopy |SEM Zeiss]] | *[[/SEM: Scanning Electron Microscopy |SEM Zeiss]] | ||
*[[/SEM: Scanning Electron Microscopy |SEM Zeiss Supra 60 VP]] | *[[/SEM: Scanning Electron Microscopy |SEM Zeiss Supra 60 VP]] | ||
*[[/SEM: Scanning Electron Microscopy#Nova600_SEM|SEM FEI Nova 600 NanoSEM]] | *[[/SEM: Scanning Electron Microscopy#Nova600_SEM|SEM FEI Nova 600 NanoSEM]] | ||
*[[/SEM: Scanning Electron Microscopy |SEM FEI Nova 600 NanoSEM]] | *[[/SEM: Scanning Electron Microscopy |SEM FEI Nova 600 NanoSEM]] | ||
*[[/AFM: Atomic Force Microscopy|AFM - ''Atomic Force Microscopy'']] | *[[/AFM: Atomic Force Microscopy|AFM - ''Atomic Force Microscopy'']] | ||
Revision as of 14:30, 11 March 2015
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Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Stress measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point_Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment