Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

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 ==SiO2 etch nLOF==
+{| border="2" cellspacing="2" cellpadding="3"
+|-style="background:Gray; color:White"
+!Parameter
+!Resist mask
+|-
+|Coil Power [W]
+|800
+|-
+|Platen Power [W]
+|100
+|-
+|Platen temperature [<sup>o</sup>C]
+|0
+|-
+|CF<sub>4</sub> flow [sccm]
+|30
+|-
+|H<sub>2</sub> flow [sccm]
+|10
+|-
+|Pressure [mTorr]
+|4
+|-
+|}
+{| border="2" cellspacing="2" cellpadding="3"
+|-style="background:Black; color:White"
+!Results
+!Test on wafer with 50% load (Travka 50), by BGHE @danchip
+|-
+|Etch rate of thermal oxide
+|'''>110 nm/min (50% etch load) (09-03-2015)'''
+|
+|-
+|Selectivity to  resist [:1]
+|'''<0.7:1''' (SiO2:resist)
+|-
+|Wafer uniformity (100mm)
+|
+|-
+|Profile [<sup>o</sup>]
+|Not known
+|-
+|Wafer uniformity map (click on the image to view a larger image)
+|Not Known
+|-
+|SEM profile images
+|NONE
+|-
+|Etch rate in nLOF resist
+|1.6µm was removed after 10min
+|-
+|}