Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
No edit summary |
|||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_oxide click here]''' | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_oxide click here]''' | ||
It is possible to etch SiO2 in the ICP metal etcher but it is not designed for it and the results are not fantastic. It is a challenge to get a good selectivity to resist (typically in the range of 1:1 or worse) and it is probably not possible to get a profile angle of 90 degrees. More likely about 75-85 degrees. | |||
===Slow etch of SiO2 with resist as masking material - using a 6" carrier wafer with recess === | ===Slow etch of SiO2 with resist as masking material - using a 6" carrier wafer with recess === | ||