Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions
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*Standard polySi: 620 <sup>o</sup>C | *Standard polySi: 620 <sup>o</sup>C | ||
*Amorphous polySi: 560-580 <sup>o</sup>C | *Amorphous polySi: 560-580 <sup>o</sup>C | ||
*Boron doped a-Si: 580 <sup>o</sup>C | |||
*Phosphorus doped a-Si: 580 <sup>o</sup>C | |||
*Boron doped polySi: 620 <sup>o</sup>C | *Boron doped polySi: 620 <sup>o</sup>C | ||
*Phosphorus doped polySi: 620 <sup>o</sup>C | *Phosphorus doped polySi: 620 <sup>o</sup>C | ||