Jump to content

Specific Process Knowledge/Lithography/CSAR: Difference between revisions

← Older editNewer edit →
VisualWikitext
Tigre (talk | contribs)
DCH-Employees-701
2,257 edits
Tigre (talk | contribs)
DCH-Employees-701
2,257 edits
Line 472: Line 472:
!colspan="7" width=85%| SEM inspection of wafer 6.13, 30 nm exposed pattern, shot pitch 7 nm
!colspan="7" width=85%| SEM inspection of wafer 6.13, 30 nm exposed pattern, shot pitch 7 nm
|-
|-
|-
! 240 [muC/cm2]
| [[File:6_13_30nm_240_shot14.png|200px]]
| [[File:6_13_30nm_240_shot14_Lines.png|200px]]
|
|
! ACHK NOT READY
|-
|-  
|-  
! 270 [muC/cm2]
! 270 [muC/cm2]
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/CSAR"