Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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{| class = "collapsible collapsed" width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;" | {| class = "collapsible collapsed" width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;" | ||
! width=15%| | ! width=15%| | ||
! colspan="4"| SEM inspection of wafer 6.13, 20 nm exposed pattern, shot pitch 7 nm | |||
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{| class=" | {| class = "collapsible collapsed" width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;" | ||
!colspan="6"| SEM inspection of wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm | ! width=15%| | ||
! colspan="6"| SEM inspection of wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm | |||
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! 230 [muC/cm2] | ! 230 [muC/cm2] | ||
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{| class=" | {| class = "collapsible collapsed" width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;" | ||
!colspan="4"| SEM inspection of wafer 4.09, 30 nm exposed pattern, shot pitch 5 nm | ! width=15%| | ||
! colspan="4"| SEM inspection of wafer 4.09, 30 nm exposed pattern, shot pitch 5 nm | |||
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{| class=" | {| class = "collapsible collapsed" width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;" | ||
!colspan="4"| SEM inspection of wafer 4.09, 20 nm exposed pattern, shot pitch 5 nm | ! width=15%| | ||
! colspan="4"| SEM inspection of wafer 4.09, 20 nm exposed pattern, shot pitch 5 nm | |||
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|} | |} | ||
{| class=" | {| class = "collapsible collapsed" width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;" | ||
!colspan="4"| SEM inspection of wafer 4.09, 15 nm exposed pattern, shot pitch 5 nm | ! width=15%| | ||
! colspan="4"| SEM inspection of wafer 4.09, 15 nm exposed pattern, shot pitch 5 nm | |||
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{| class=" | {| class = "collapsible collapsed" width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;" | ||
!colspan="4"| | ! width=15%| | ||
! colspan="4"| SEM inspection of wafer 3.05, 50 nm exposed pattern, shot pitch 5 nm | |||
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{| class=" | {| class = "collapsible collapsed" width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;" | ||
!colspan="4"| SEM inspection of wafer 3.05, 30 nm exposed pattern, shot pitch 5 nm | ! width=15%| | ||
! colspan="4"| SEM inspection of wafer 3.05, 30 nm exposed pattern, shot pitch 5 nm | |||
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{| class=" | {| class = "collapsible collapsed" width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;" | ||
!colspan="4"| SEM inspection of wafer 3.05, 20 nm exposed pattern, shot pitch 5 nm | ! width=15%| | ||
! colspan="4"| SEM inspection of wafer 3.05, 20 nm exposed pattern, shot pitch 5 nm | |||
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