Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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== Dosetests == | == Dosetests == | ||
So far (September 2014) three wafers with CSAR have been e-beam exposed with dosetests and inspected in SEM. Thickness of resist, e-beam dose and development time has been changed somewhat from wafer to wafer: | So far (September 2014) three wafers with CSAR have been e-beam exposed with dosetests and inspected in SEM. Thickness of resist, e-beam dose and development time has been changed somewhat from wafer to wafer: | ||
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=== SEM inspection === | |||
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!colspan="8"| SEM inspection of wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm | !colspan="8"| SEM inspection of wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm | ||
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