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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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| Gasses
| Gasses
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
|rowspan="7" width="20%" | Profiles of lines exposed at 300 µC/cm2
|rowspan="7" width="20%" | Profiles of lines exposed at 300 µC/cm2, etched 2:30 minutes (150s) with recipe 'nano1.42'
  [[File:617817 HD-4_11.png|200px]] [[File:617817 HD-4_18.png|200px]]  
  [[File:617817 HD-4_11.png|200px]] [[File:617817 HD-4_18.png|200px]]  
[[File:617817 HD-4_16.png|200px]]  [[File:617817 HD-4_14.png|200px]]  
[[File:617817 HD-4_16.png|200px]]  [[File:617817 HD-4_14.png|200px]]