Specific Process Knowledge/Lithography/CSAR: Difference between revisions
| Line 745: | Line 745: | ||
5 min oxygen clean between runs | 5 min oxygen clean between runs | ||
|- | |- | ||
! rowspan=" | ! rowspan="2" align="center"| Etch rates | ||
| Si | |||
| [nm/min] | |||
|- | |||
|CSAR | |||
| [nm/min] | | [nm/min] | ||
|- | |- | ||
|} | |} | ||