Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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All etch rates presented here are measured on chips (i.e. diced 4" wafers) crystal bonded to a carrier. The carrier is either a blank Si wafer, a Si wafer spin coated with resist or a Si wafer coated with ALD grown Al2O3. | All etch rates presented here are measured on chips (i.e. diced 4" wafers) crystal bonded to a carrier. The carrier is either a blank Si wafer, a Si wafer spin coated with resist or a Si wafer coated with ALD grown Al2O3. | ||
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|+style="background:Black; color:White" colspan="4"|'''Etch Tests of CSAR, recipe 'nano1.42', DRIE PEGASUS, A-1''' | |+style="background:Black; color:White" colspan="4"|'''Etch Tests of CSAR, recipe 'nano1.42', DRIE PEGASUS, A-1''' | ||
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|1/4 4" Si wafer with non-patterned ~125 nm CSAR, <br>not crystal bonded to carrier | |1/4 4" Si wafer with non-patterned ~125 nm CSAR, <br>not crystal bonded to Si carrier | ||
|~83.3 (based on 3 runs) | |~83.3 (based on 3 runs) | ||
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