Specific Process Knowledge/Lithography/CSAR: Difference between revisions
| Line 700: | Line 700: | ||
|Full 4" Si wafer with non-patterned ~180 nm CSAR | |Full 4" Si wafer with non-patterned ~180 nm CSAR | ||
|~56.5 (based on 2 runs) | |~56.5 (based on 2 runs) | ||
|- | |- | ||
|- | |- | ||
|Full 4" Si wafer with non-patterned ~240 nm CSAR, <br>postbaked 60 sec @ 130 degC | |Full 4" Si wafer with non-patterned ~240 nm CSAR, <br>postbaked 60 sec @ 130 degC | ||
|~56.5 (based on 2 runs) | |~56.5 (based on 2 runs) | ||
|- | |- | ||
|- | |- | ||
|1/4 4" Si wafer with non-patterned ~125 nm CSAR, <br>not crystal bonded to carrier | |1/4 4" Si wafer with non-patterned ~125 nm CSAR, <br>not crystal bonded to carrier | ||
|~83.3 (based on 3 runs) | |~83.3 (based on 3 runs) | ||
|- | |- | ||
|- | |- | ||
|1/4 4" Si wafer with non-patterned ~125 CSAR, <br>crystal bonded to 4" Si carrier | |1/4 4" Si wafer with non-patterned ~125 CSAR, <br>crystal bonded to 4" Si carrier | ||
|~54 (based on 1 run) | |~54 (based on 1 run) | ||
|- | |- | ||